Merge branch 'linux_next' of git://git.kernel.org/pub/scm/linux/kernel/git/mchehab/linux-edac

Pull EDAC fixes from Mauro Carvalho Chehab:
 "A series of EDAC driver fixes.  It also has one core fix at the
  documentation, and a rename patch, fixing the name of the struct that
  contains the rank information."

* 'linux_next' of git://git.kernel.org/pub/scm/linux/kernel/git/mchehab/linux-edac:
  edac: rename channel_info to rank_info
  i5400_edac: Avoid calling pci_put_device() twice
  edac: i5100 ack error detection register after each read
  edac: i5100 fix erroneous define for M1Err
  edac: sb_edac: Fix a wrong value setting for the previous value
  edac: sb_edac: Fix a INTERLEAVE_MODE() misuse
  edac: sb_edac: Let the driver depend on PCI_MMCONFIG
  edac: Improve the comments to better describe the memory concepts
  edac/ppc4xx_edac: Fix compilation
  Fix sb_edac compilation with 32 bits kernels
This commit is contained in:
Linus Torvalds 2012-03-28 14:24:40 -07:00
commit f0f3680e50
7 changed files with 209 additions and 103 deletions

View file

@ -70,25 +70,64 @@ enum dev_type {
#define DEV_FLAG_X32 BIT(DEV_X32)
#define DEV_FLAG_X64 BIT(DEV_X64)
/* memory types */
/**
* enum mem_type - memory types. For a more detailed reference, please see
* http://en.wikipedia.org/wiki/DRAM
*
* @MEM_EMPTY Empty csrow
* @MEM_RESERVED: Reserved csrow type
* @MEM_UNKNOWN: Unknown csrow type
* @MEM_FPM: FPM - Fast Page Mode, used on systems up to 1995.
* @MEM_EDO: EDO - Extended data out, used on systems up to 1998.
* @MEM_BEDO: BEDO - Burst Extended data out, an EDO variant.
* @MEM_SDR: SDR - Single data rate SDRAM
* http://en.wikipedia.org/wiki/Synchronous_dynamic_random-access_memory
* They use 3 pins for chip select: Pins 0 and 2 are
* for rank 0; pins 1 and 3 are for rank 1, if the memory
* is dual-rank.
* @MEM_RDR: Registered SDR SDRAM
* @MEM_DDR: Double data rate SDRAM
* http://en.wikipedia.org/wiki/DDR_SDRAM
* @MEM_RDDR: Registered Double data rate SDRAM
* This is a variant of the DDR memories.
* A registered memory has a buffer inside it, hiding
* part of the memory details to the memory controller.
* @MEM_RMBS: Rambus DRAM, used on a few Pentium III/IV controllers.
* @MEM_DDR2: DDR2 RAM, as described at JEDEC JESD79-2F.
* Those memories are labed as "PC2-" instead of "PC" to
* differenciate from DDR.
* @MEM_FB_DDR2: Fully-Buffered DDR2, as described at JEDEC Std No. 205
* and JESD206.
* Those memories are accessed per DIMM slot, and not by
* a chip select signal.
* @MEM_RDDR2: Registered DDR2 RAM
* This is a variant of the DDR2 memories.
* @MEM_XDR: Rambus XDR
* It is an evolution of the original RAMBUS memories,
* created to compete with DDR2. Weren't used on any
* x86 arch, but cell_edac PPC memory controller uses it.
* @MEM_DDR3: DDR3 RAM
* @MEM_RDDR3: Registered DDR3 RAM
* This is a variant of the DDR3 memories.
*/
enum mem_type {
MEM_EMPTY = 0, /* Empty csrow */
MEM_RESERVED, /* Reserved csrow type */
MEM_UNKNOWN, /* Unknown csrow type */
MEM_FPM, /* Fast page mode */
MEM_EDO, /* Extended data out */
MEM_BEDO, /* Burst Extended data out */
MEM_SDR, /* Single data rate SDRAM */
MEM_RDR, /* Registered single data rate SDRAM */
MEM_DDR, /* Double data rate SDRAM */
MEM_RDDR, /* Registered Double data rate SDRAM */
MEM_RMBS, /* Rambus DRAM */
MEM_DDR2, /* DDR2 RAM */
MEM_FB_DDR2, /* fully buffered DDR2 */
MEM_RDDR2, /* Registered DDR2 RAM */
MEM_XDR, /* Rambus XDR */
MEM_DDR3, /* DDR3 RAM */
MEM_RDDR3, /* Registered DDR3 RAM */
MEM_EMPTY = 0,
MEM_RESERVED,
MEM_UNKNOWN,
MEM_FPM,
MEM_EDO,
MEM_BEDO,
MEM_SDR,
MEM_RDR,
MEM_DDR,
MEM_RDDR,
MEM_RMBS,
MEM_DDR2,
MEM_FB_DDR2,
MEM_RDDR2,
MEM_XDR,
MEM_DDR3,
MEM_RDDR3,
};
#define MEM_FLAG_EMPTY BIT(MEM_EMPTY)
@ -166,8 +205,9 @@ enum scrub_type {
#define OP_OFFLINE 0x300
/*
* There are several things to be aware of that aren't at all obvious:
* Concepts used at the EDAC subsystem
*
* There are several things to be aware of that aren't at all obvious:
*
* SOCKETS, SOCKET SETS, BANKS, ROWS, CHIP-SELECT ROWS, CHANNELS, etc..
*
@ -176,36 +216,61 @@ enum scrub_type {
* creating a common ground for discussion, terms and their definitions
* will be established.
*
* Memory devices: The individual chip on a memory stick. These devices
* commonly output 4 and 8 bits each. Grouping several
* of these in parallel provides 64 bits which is common
* for a memory stick.
* Memory devices: The individual DRAM chips on a memory stick. These
* devices commonly output 4 and 8 bits each (x4, x8).
* Grouping several of these in parallel provides the
* number of bits that the memory controller expects:
* typically 72 bits, in order to provide 64 bits +
* 8 bits of ECC data.
*
* Memory Stick: A printed circuit board that aggregates multiple
* memory devices in parallel. This is the atomic
* memory component that is purchaseable by Joe consumer
* and loaded into a memory socket.
* memory devices in parallel. In general, this is the
* Field Replaceable Unit (FRU) which gets replaced, in
* the case of excessive errors. Most often it is also
* called DIMM (Dual Inline Memory Module).
*
* Socket: A physical connector on the motherboard that accepts
* a single memory stick.
* Memory Socket: A physical connector on the motherboard that accepts
* a single memory stick. Also called as "slot" on several
* datasheets.
*
* Channel: Set of memory devices on a memory stick that must be
* grouped in parallel with one or more additional
* channels from other memory sticks. This parallel
* grouping of the output from multiple channels are
* necessary for the smallest granularity of memory access.
* Some memory controllers are capable of single channel -
* which means that memory sticks can be loaded
* individually. Other memory controllers are only
* capable of dual channel - which means that memory
* sticks must be loaded as pairs (see "socket set").
* Channel: A memory controller channel, responsible to communicate
* with a group of DIMMs. Each channel has its own
* independent control (command) and data bus, and can
* be used independently or grouped with other channels.
*
* Chip-select row: All of the memory devices that are selected together.
* for a single, minimum grain of memory access.
* This selects all of the parallel memory devices across
* all of the parallel channels. Common chip-select rows
* for single channel are 64 bits, for dual channel 128
* bits.
* Branch: It is typically the highest hierarchy on a
* Fully-Buffered DIMM memory controller.
* Typically, it contains two channels.
* Two channels at the same branch can be used in single
* mode or in lockstep mode.
* When lockstep is enabled, the cacheline is doubled,
* but it generally brings some performance penalty.
* Also, it is generally not possible to point to just one
* memory stick when an error occurs, as the error
* correction code is calculated using two DIMMs instead
* of one. Due to that, it is capable of correcting more
* errors than on single mode.
*
* Single-channel: The data accessed by the memory controller is contained
* into one dimm only. E. g. if the data is 64 bits-wide,
* the data flows to the CPU using one 64 bits parallel
* access.
* Typically used with SDR, DDR, DDR2 and DDR3 memories.
* FB-DIMM and RAMBUS use a different concept for channel,
* so this concept doesn't apply there.
*
* Double-channel: The data size accessed by the memory controller is
* interlaced into two dimms, accessed at the same time.
* E. g. if the DIMM is 64 bits-wide (72 bits with ECC),
* the data flows to the CPU using a 128 bits parallel
* access.
*
* Chip-select row: This is the name of the DRAM signal used to select the
* DRAM ranks to be accessed. Common chip-select rows for
* single channel are 64 bits, for dual channel 128 bits.
* It may not be visible by the memory controller, as some
* DIMM types have a memory buffer that can hide direct
* access to it from the Memory Controller.
*
* Single-Ranked stick: A Single-ranked stick has 1 chip-select row of memory.
* Motherboards commonly drive two chip-select pins to
@ -218,8 +283,8 @@ enum scrub_type {
*
* Double-sided stick: DEPRECATED TERM, see Double-Ranked stick.
* A double-sided stick has two chip-select rows which
* access different sets of memory devices. The two
* rows cannot be accessed concurrently. "Double-sided"
* access different sets of memory devices. The two
* rows cannot be accessed concurrently. "Double-sided"
* is irrespective of the memory devices being mounted
* on both sides of the memory stick.
*
@ -247,10 +312,22 @@ enum scrub_type {
* PS - I enjoyed writing all that about as much as you enjoyed reading it.
*/
struct channel_info {
int chan_idx; /* channel index */
u32 ce_count; /* Correctable Errors for this CHANNEL */
char label[EDAC_MC_LABEL_LEN + 1]; /* DIMM label on motherboard */
/**
* struct rank_info - contains the information for one DIMM rank
*
* @chan_idx: channel number where the rank is (typically, 0 or 1)
* @ce_count: number of correctable errors for this rank
* @label: DIMM label. Different ranks for the same DIMM should be
* filled, on userspace, with the same label.
* FIXME: The core currently won't enforce it.
* @csrow: A pointer to the chip select row structure (the parent
* structure). The location of the rank is given by
* the (csrow->csrow_idx, chan_idx) vector.
*/
struct rank_info {
int chan_idx;
u32 ce_count;
char label[EDAC_MC_LABEL_LEN + 1];
struct csrow_info *csrow; /* the parent */
};
@ -274,7 +351,7 @@ struct csrow_info {
/* channel information for this csrow */
u32 nr_channels;
struct channel_info *channels;
struct rank_info *channels;
};
struct mcidev_sysfs_group {